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D1047 datasheet download

D1047 datasheet

VCBO. Collector-base voltage (IE = 0). V. VCEO. Collector-emitter voltage ( IB = 0). V. VEBO. Emitter-base voltage (IC = 0). 6. V. IC. Collector current. A. ICM. Collector peak current (tP < 5 ms). A. Ptot. Total dissipation at Tc = 25 °C. W. Tstg. Storage temperature. to °C. TJ. Max. operating. Manufacture, Part Number, Description, PDF. Sanyo Semicon Device, D, 2SD Ordering number:ENNF PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB /2SD V/12A AF 60W Output Applications Features · Ca, D pdf. 8 Aug Part Number: D, 2SD Function: NPN Triple Diffused Planar Silicon Transistors. Collector-to-Base Voltage: Vcbo = V.

D Datasheet, D PDF, D Data sheet, D manual, D pdf, D, datenblatt, Electronics D, alldatasheet, free, datasheet, Datasheets, data sheet, datas sheets, databook, free datasheet. 28 Jan Part Number: D Function: High power NPN epitaxial planar bipolar transistor / TO-3P Package Maker: STMicroelectronics. Pinouts: D datasheet. Description: The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting. 2SD 2SD transistor is designed for use in general purpose Power amplifier,application. FEATURES: * Collector-Emitter Voltage. VCEO= V(Min). * DC Current Gain. HFE= @lc= A. * Complement to 2s 12 AMPERE. POWER. TRANASISTORS. VOLTS. WATTS. MAXIMUM RATINGS.

Collector Base Breakdown Voltage. Collector Emitter Breakdown Voltage. Emitter Base Breakdown Voltage. Collector Cutoff Current. Emitter Cutoff Current. *DC Current Gain. DC Current Gain. Collector- Emitter Saturation Voltage. BVCBO. BVCEO. BVEBO. ICBO. IEBO. hFE1. hFE2. VCE(sat). IC=5 mA IE=0. IC=10 mA. D datasheet, D pdf, D data sheet, datasheet, data sheet, pdf. D Datasheet, D PDF, High power NPN epitaxial planar bipolar transistor.

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